Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material

The invention relates to a method for producing a method for non-support substrate monocrystal semiconductor material prepared from. The using the following step, comprising: A degeneration and contact surface method of between two of; and (5,5 ') and a thin layer nano-particle to the strutting (7); On the coring layer, wherein the method of growing epitaxial, which is a purpose for composing to the substrate the matrix layer material (10), the time for tundish which does not need to the bracket; and holding of sintering the contact surface (9) is; andThe thick layer (10) and support material (7) of polyimide, and wherein each other, different from the reacting in the time assembly (7), a stress with a rough is layer (10) polyimide is coefficient of the support material, different and nucleating process (5,5 ') and single crystal in the layer (10) from, wherein the adhesive and contacting surface (9) and strutting (7) is removed.