Substrate dividing method
Abstract
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the startingpoint region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
Term
Term ended
Expired 6 March 2023, 3.6 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
8 priority claims, no other members on record
Priority claims8
| Document | Office | Kind | Date |
|---|---|---|---|
| 2002067289 | Japan | A | |
| 2002067289 | Japan | A | |
| 0302669 | Japan | W | |
| 0302669 | Japan | W | |
| 2002067289 | – | – | – |
| 0302669 | – | – | – |
| JP20020067289 | – | – | – |
| WO2003JP02669 | – | – | – |
Numbers
- Publication, DOCDB
- 534142
- Publication, EPODOC
- AT534142T
- Application
- 3744003
- Application, DOCDB
- 03744003
- Application, EPODOC
- AT20030744003T
Titles2
- German
- VERFAHREN ZUM AUFTRENNEN EINES SUBSTRATS
- English
- PROCESS FOR DISCONNECTING A SUBSTRATE
Classification
- CPC, 20
- H01L21/78
- B23K26/0622
- B28D5/00
- B23K26/40
- B28D5/0011
- B23K26/53
- H01L2924/0002
- B23K2103/50
- H01L21/76894
- B23K2203/50
- H01L21/268
- H01L21/304
- H01L21/30604
- H01L21/6836
- H01L23/562
- H01L23/544
- H01L2221/68327
- H01L2221/68336
- H01L2223/5446
- H01L2924/00
- IPC, 12
- H01L21 78
- B23K26 38
- B23K26 40
- B23K101 40
- H01L21 26
- H01L21 30
- H01L21 301
- H01L21 324
- H01L21 42
- H01L21 46
- H01L21 477
- H05K3 00