AT533179T
A stacked thin-film-transistor non-volatile memory device and method for fabricating the same
Abstract
This record has no abstract on file.
Term
0.7 yearsleft in the term
Expires 14 June 2027.
- Priority
- Filed
- Granted
- Today
- Expires
1 priority claim, no other members on record
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 54952006 | United States of America | A |
Numbers
- Application
- 7252422
Titles2
- German
- HERSTELLUNGSVERFAHREN FÜR EIN NICHTFLÜCHTIGES SPEICHERBAUELEMENT
- English
- METHOD OF MANUFACTURING A NON-VOLATILE MEMORY ELEMENT
Classification
- CPC, 15
- H01L27/11568
- H01L21/8221
- H10B43/30
- H01L21/28282
- H01L21/84
- H01L27/0688
- H01L27/1203
- H01L27/115
- H01L29/4234
- H01L27/11578
- H10B69/00
- H01L29/40117
- H10B43/20
- H10B43/10
- H10B63/80
- IPC, 5
- H01L21 8247
- G11C16 04
- H01L21 8246
- H01L27 06
- H01L27 115