Nova Patents
AT526667T

Detecting over programmed memory

Abstract

A non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of the memory cell. Because of the difference in the programming speed of different memory cells in the system, there is a possibility that some of the memory cell is over programmed. That is, for example, the threshold voltage may be moved out of the range of the intended value or values. The invention includes determining whether the memory cell is over programmed.

Term

Term ended

Expired 30 June 2024, 2.2 years ago.

  1. Priority
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  3. Granted
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18 members in 8 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
62906803United States of AmericaA
2004021254United States of AmericaW

Members18

Family members, oldest first
DocumentOfficeKind
US2005024939A1United States of AmericaA1
WO2005015566A1World Intellectual Property Organization (WIPO)A1
TW200509136ATaiwan Province of ChinaA
US6917542B2United States of AmericaB2
US2005207222A1United States of AmericaA1
TWI248085BTaiwan Province of ChinaB
KR20060039929ARepublic of KoreaA
EP1656676A1European Patent Office (EPO)A1
CN1853239AChinaA
JP2007500411AJapanA
US7215575B2United States of AmericaB2
WO2005015566A8World Intellectual Property Organization (WIPO)A8
KR101049581B1Republic of KoreaB1
JP4754486B2JapanB2
EP1656676B1European Patent Office (EPO)B1
AT526667TThis recordAustriaT
ATE526667T1AustriaT1
CN1853239BChinaB