A method of preparation of an epitaxial substrate

The invention relates to a extending method for preparing substrate, especially preparing GaN, SiGe, AIN or InN extending method for substrate. An objective of the present invention claims a extending method for preparing substrate, and method of further of the influence of substrate, further economically is feasible. Target of this invention realized by the following steps: Providing bottom substrate, adding atomic material to generate the weak layered area on bottom substrate, providing mode to the level of the bottom surface of the substrate under the first temperature, in which the reinforcing layer and second high - temperature, especially from separating the bottom substrate remaining part on the bottom middle sublayer together, thereby with the pedestal according to generate the pseudo substrate, providing the homogeneous phase epitaxial layer or a hetero epitaxy layer on the substrate layer.