Gallium nitride based diodes with low forward voltage and low reverse current operation

Inventions reveals a low on-State voltage (Vf) and the reverse current (Irev) maintained at a relatively low innovation in the structure of the III based diodes. Implementation of this invention is the Fermi energy level (or potential) is not fixed Xiao Teji barrier diodes made of gallium nitride material systems (10). In the metal-semiconductor interface barrier voltage (33) with the use of metals (16) type changes, use a specific metal would reduce Xiao Teji barrier diode voltages (33) and Vf falls within the range of 0.1-0.3 volts. Implemented in another case (40), a grooved structure (45) on Xiao Teji diode semiconductor material (44) formed on the lower reverse-leakage current, it contains more than a platform area between adjacent grooves (49) parallel to each other, spacing equal to the Groove (46). III implementation of the invention to provide a result from electronic through the tunnel rather than beyond the barrier voltage (81) low Vf of tunnel diode of gallium nitride. Implementation cases (120) can also have a Groove structure (121) to reduce leakage current.