Method for fabricating a germanium on insulator (GeOI) type wafer

The invention relates to an method for producing composite germanium board, the method comprises the following steps: Providing germanium substrate or comprising an epitaxial layer germanium substrate, a germanium substrate in a main surface or the main of providing medium layer, wherein the supply substrate attached to the operation substrate is provided with one operating one compound and is arranged on the corner of the source substrate and connected with the main surface parallel through-hole breaking area of the substrate substantially supply from one operating one on composite respectively, wherein made on the insulator is germanium board. And simultaneously realizing for improving dielectric film film's of with the charging benefit manufacturing process, the invention claims an between the germanium substrate and operation metal layer to provide germanium nitrogen oxide layer to the dielectric plate.