Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages

Non-volatile storage element in a set are experiencing the initial programming, since the higher reprogrammed with a verify level is a non-real-time by running bars, non-real-time is, for example, the controller enters the standby mode, or other read are pending It intended to mean a case when there is not a task or write task. The reprogramming is one that can be programmed on the bar with one page in the set, when the other task to read or write task is pending, the stops are at a page boundary, and, when possible, and restart controller is used again. For pages and / or to identify the set that is complete reprogramming, the status flag may be provided. In another aspect of the invention, the unselected word lines during the programming material is applied at a higher pass voltage. In another aspect, the reading error is counted by using a default set of voltage is determined, and if the count exceeds a threshold the set of alternate read voltage is selected.