Nova Patents
AT512465T

Stressed semiconductor device structures having granular semiconductor material

Abstract

For manufacturing semiconductor structure, method comprises: Providing a substrate (1), a substrate (1) is providing electrode (6), a electrode (6) to form the groove (12), wherein the groove is provided with an opening; the groove is provided with a finely ground particles semiconductor material (17), cover of the opening is a located in the flute of the finely ground particles semiconductor material, and then annealing structure obtained.

Term

Term ended

Expired 9 November 2024, 1.9 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

18 members in 7 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
70701803United States of AmericaA
2004037434United States of AmericaW

Members18

Family members, oldest first
DocumentOfficeKind
US2005106799A1United States of AmericaA1
WO2005050701A2World Intellectual Property Organization (WIPO)A2
WO2005050701A8World Intellectual Property Organization (WIPO)A8
WO2005050701A3World Intellectual Property Organization (WIPO)A3
EP1683187A2European Patent Office (EPO)A2
US7122849B2United States of AmericaB2
CN1879227AChinaA
KR20070015499ARepublic of KoreaA
JP2007511909AJapanA
US2008064172A1United States of AmericaA1
EP1683187A4European Patent Office (EPO)A4
US7488658B2United States of AmericaB2
CN100468785CChinaC
KR100946038B1Republic of KoreaB1
EP1683187B1European Patent Office (EPO)B1
AT512465TThis recordAustriaT
ATE512465T1AustriaT1
JP4843498B2JapanB2