Atomic layer deposition methods
Abstract
Enables the first forerunner gas to flow to the substrate, wherein effectively; the substrate form the first single. The indoor of the lower surface microwave plasma state, enabled the conducting to flow to the indoor first single the first forerunner gas different second forerunner gas, wherein a which is connected with the first single reaction effectively; the substrate form the second single, wherein the form of the second single with the first single is different. The second single layer comprises a single first and second forerunner gas component. In one embodiment, the tandem duplication the first and an of the second forerunner gas, wherein the effectively material is arranged on the substrate are formed with the second single a massively. The connectors and manner of motor vehicle.
Term
Term ended
Expired 12 November 2023, 2.9 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
29 members in 10 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 29307202 | United States of America | A | |
| 0336223 | United States of America | W |
Members29
| Document | Office | Kind | |
|---|---|---|---|
| US2004092132A1 | United States of America | A1 | |
| WO2004044963A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU2003290815A1 | Australia | A1 | |
| AU2003290815A8 | Australia | A8 | |
| TW200424350A | Taiwan Province of China | A | |
| WO2004044963A3 | World Intellectual Property Organization (WIPO) | A3 | |
| WO2004044963B1 | World Intellectual Property Organization (WIPO) | B1 | |
| KR20050074581A | Republic of Korea | A | |
| EP1561239A2 | European Patent Office (EPO) | A2 | |
| US2005260854A1 | United States of America | A1 | |
| US2006029738A1 | United States of America | A1 | |
| JP2006505696A | Japan | A | |
| CN1739188A | China | A | |
| US7022605B2 | United States of America | B2 | |
| TWI257438B | Taiwan Province of China | B | |
| US2006172534A1 | United States of America | A1 | |
| US7115529B2 | United States of America | B2 | |
| KR20060105006A | Republic of Korea | A | |
| KR20060110378A | Republic of Korea | A | |
| KR100704086B1 | Republic of Korea | B1 | |
| KR100719644B1 | Republic of Korea | B1 | |
| KR100733181B1 | Republic of Korea | B1 | |
| US7402518B2 | United States of America | B2 | |
| CN100483636C | China | C | |
| US7576012B2 | United States of America | B2 | |
| EP1561239B1 | European Patent Office (EPO) | B1 | |
| AT507579TThis record | Austria | T | |
| ATE507579T1 | Austria | T1 | |
| DE60336920D1 | Germany | D1 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 3783399
Titles2
- German
- VERFAHREN ZUR ATOMSCHICHTABSCHEIDUNG
- English
- PROCESS FOR ATOMIC LAYER DEPOSITION
Classification
- CPC, 15
- H01L21/0228
- C23C16/38
- C23C16/403
- C23C16/45542
- C23C16/515
- H01L21/02178
- H01L21/02183
- H01L21/02186
- H01L21/02205
- H01L21/02274
- H01L21/28562
- H01L21/3141
- H01L21/31616
- H01L21/31683
- H01L21/76841
- IPC, 8
- C23C16 38
- C23C16 40
- C23C16 44
- C23C16 455
- H01L21 285
- H01L21 314
- H01L21 316
- H01L21 768