Nova Patents
AT507579T

Atomic layer deposition methods

Abstract

Enables the first forerunner gas to flow to the substrate, wherein effectively; the substrate form the first single. The indoor of the lower surface microwave plasma state, enabled the conducting to flow to the indoor first single the first forerunner gas different second forerunner gas, wherein a which is connected with the first single reaction effectively; the substrate form the second single, wherein the form of the second single with the first single is different. The second single layer comprises a single first and second forerunner gas component. In one embodiment, the tandem duplication the first and an of the second forerunner gas, wherein the effectively material is arranged on the substrate are formed with the second single a massively. The connectors and manner of motor vehicle.

Term

Term ended

Expired 12 November 2023, 2.9 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

29 members in 10 offices

This recordMember, by publication datePriority claim

Priority claims2

Priority claims
DocumentOfficeKindDate
29307202United States of AmericaA
0336223United States of AmericaW

Members29

Family members, oldest first
DocumentOfficeKind
US2004092132A1United States of AmericaA1
WO2004044963A2World Intellectual Property Organization (WIPO)A2
AU2003290815A1AustraliaA1
AU2003290815A8AustraliaA8
TW200424350ATaiwan Province of ChinaA
WO2004044963A3World Intellectual Property Organization (WIPO)A3
WO2004044963B1World Intellectual Property Organization (WIPO)B1
KR20050074581ARepublic of KoreaA
EP1561239A2European Patent Office (EPO)A2
US2005260854A1United States of AmericaA1
US2006029738A1United States of AmericaA1
JP2006505696AJapanA
CN1739188AChinaA
US7022605B2United States of AmericaB2
TWI257438BTaiwan Province of ChinaB
US2006172534A1United States of AmericaA1
US7115529B2United States of AmericaB2
KR20060105006ARepublic of KoreaA
KR20060110378ARepublic of KoreaA
KR100704086B1Republic of KoreaB1
KR100719644B1Republic of KoreaB1
KR100733181B1Republic of KoreaB1
US7402518B2United States of AmericaB2
CN100483636CChinaC
US7576012B2United States of AmericaB2
EP1561239B1European Patent Office (EPO)B1
AT507579TThis recordAustriaT
ATE507579T1AustriaT1
DE60336920D1GermanyD1