Reducing read disturb for non-volatile storage

The present invention relates to a system for reducing or eliminating failure in the form of reading (read disturb) of the non-volatile storage. In one embodiment it is an object is to prevent reading failure to prevent or minimize the boosted channel of the memory device. For example, it can be implemented to control the boosting of the source side of the NAND string channel during a read process, or so as to decrease. The source side of the NAND string channel is not boosted, at least one read fault types is minimized or not generated.