Compensation currents in non-volatile memory read operations

Adjacent the apparent charge stored on a floating gate of the memory cell because of coupling of an electric field caused by charges stored in the floating gate can be shifted. The shift in apparent charge can cause of a false reading by reducing the conduction current of the memory cell is detected as a result increases the apparent threshold voltage. A read process for a selected memory cell takes into account the status of one or more adjacent memory cells. If the adjacent memory cell is in one or more lines in the determined set of program state and may be to increase the apparent conduction current of the selected memory cell compensation current is provided. The bit line of the programmed adjacent memory cell initialization voltage is provided to derive the compensation current between the bit line of the bit lines and the selected memory cell in the programmed adjacent cells.