Read operation for non-volatile storage with compensation for floating gate coupling

May be caused by the coupling of the electric field based on the charge stored in non-volatile memory cells of the floating gate (or other charge storage device), variation of the apparent charge stored in adjacent floating gates (or other adjacent charge storing elements). This problem arises most clearly between sets of adjacent memory cells programmed at different times. In order to prevent such a coupling, to provide compensation to an adjacent memory cell read operation for a particular memory cell, which is adjacent to the memory cell it is to reduce the coupling effect that has on the particular memory cell. To this end, a read voltage is applied to the word line of the selected memory cell, applying a second pass voltage to the selected word line of the memory cell adjacent to the memory cell and is applied to the word line and the first pass voltage is added. Prior to the selected memory cell is read, the state of the adjacent memory cell is read, and the second pass voltage is set according to the state.