AT495545T

Nanocrystal flash memory device and manufacturing method therefor

Abstract

This record has no abstract on file.

Term

Term ended

Expired 25 September 2022, 4 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

12 members in 7 offices

This recordMember, by publication datePriority claim

Priority claims8

Priority claims
DocumentOfficeKindDate
34807201United States of AmericaP
34807201United States of AmericaP
8750602United States of AmericaA
8750602United States of AmericaA
348072P
87506
US20010348072P
US20020087506

Members12

Family members, oldest first
DocumentOfficeKind
EP1304730A2European Patent Office (EPO)A2
US2003077863A1United States of AmericaA1
JP2003152120AJapanA
TW541666BTaiwan Province of ChinaB
US6656792B2United States of AmericaB2
SG106099A1SingaporeA1
EP1304730A3European Patent Office (EPO)A3
JP4334196B2JapanB2
EP1304730B1European Patent Office (EPO)B1
AT495545TThis recordAustriaT
ATE495545T1AustriaT1
DE60238893D1GermanyD1