Nand flash memory avoiding program disturb with a self boosting technique

Order to avoid programming the interference in the manner to the programmable nonvolatile semiconductor memory system (or other type storage system). With a uses an NAND structure of a flash memory system embodiment, a improving NAND on the source violent illegal cooking electric potential to avoid programming the interference and programming processing. A demonstration comprising a (e.g. Vdd) flow the voltage of the source contacts and is corresponding to the forbidden unit is NAND extreme source selecting transistor. Other comprising a front exerting a programming the voltage precharge voltage generation exerting a corresponding to forbidden NAND unit is the chosen word line.