AT492907T
Power mosfet having a trench gate electrode and method of making the same
Abstract
This record has no abstract on file.
Term
Term ended
Expired 21 June 2022, 4.3 years ago.
- Priority
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74 members in 10 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 89865201 | United States of America | A | |
| 0220301 | United States of America | W |
Members74
| Document | Office | Kind | |
|---|---|---|---|
| US2003006454A1 | United States of America | A1 | |
| US2003008460A1 | United States of America | A1 | |
| WO03005452A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU2002310514A1 | Australia | A1 | |
| US2003030104A1 | United States of America | A1 | |
| US2003032247A1 | United States of America | A1 | |
| US2003032248A1 | United States of America | A1 | |
| WO03015180A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU2002355547A1 | Australia | A1 | |
| US6569738B2 | United States of America | B2 | |
| US2003102564A1 | United States of America | A1 | |
| US6600193B2 | United States of America | B2 | |
| TW544913B | Taiwan Province of China | B | |
| WO03005452A3 | World Intellectual Property Organization (WIPO) | A3 | |
| WO03015180A3 | World Intellectual Property Organization (WIPO) | A3 | |
| US2003235958A1 | United States of America | A1 | |
| EP1376675A2 | European Patent Office (EPO) | A2 | |
| JP2004031959A | Japan | A | |
| US2004038467A1 | United States of America | A1 | |
| US2004038481A1 | United States of America | A1 | |
| US6709930B2 | United States of America | B2 | |
| TW586232B | Taiwan Province of China | B | |
| KR20040044441A | Republic of Korea | A | |
| EP1425802A2 | European Patent Office (EPO) | A2 | |
| US2004121572A1 | United States of America | A1 | |
| WO2004054000A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2003296987A1 | Australia | A1 | |
| EP1435115A2 | European Patent Office (EPO) | A2 | |
| US6764906B2 | United States of America | B2 | |
| WO2004061975A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2003300924A1 | Australia | A1 | |
| US2004166636A1 | United States of America | A1 | |
| CN1541417A | China | A | |
| JP2004535067A | Japan | A | |
| US2004227182A1 | United States of America | A1 | |
| JP2004538649A | Japan | A | |
| EP1376675A3 | European Patent Office (EPO) | A3 | |
| US6849898B2 | United States of America | B2 | |
| US6875657B2 | United States of America | B2 | |
| US6903412B2 | United States of America | B2 | |
| US2005236665A1 | United States of America | A1 | |
| CN1726596A | China | A | |
| CN1729578A | China | A | |
| US2006038223A1 | United States of America | A1 | |
| US7009247B2 | United States of America | B2 | |
| JP2006510198A | Japan | A | |
| JP2006511974A | Japan | A | |
| US7033876B2 | United States of America | B2 | |
| US2006121676A1 | United States of America | A1 | |
| DE10393852T5 | Germany | T5 | |
| DE10393853T5 | Germany | T5 | |
| CN1303699C | China | C | |
| KR100771815B1 | Republic of Korea | B1 | |
| US7291884B2 | United States of America | B2 | |
| JP4028482B2 | Japan | B2 | |
| US7326995B2 | United States of America | B2 | |
| US7416947B2 | United States of America | B2 | |
| CN100424887C | China | C | |
| US7435650B2 | United States of America | B2 | |
| CN100508210C | China | C | |
| JP2009152630A | Japan | A | |
| JP4299665B2 | Japan | B2 | |
| JP4388017B2 | Japan | B2 | |
| EP1376675B1 | European Patent Office (EPO) | B1 | |
| DE60332580D1 | Germany | D1 | |
| EP1425802B1 | European Patent Office (EPO) | B1 | |
| AT492907TThis record | Austria | T | |
| ATE492907T1 | Austria | T1 | |
| DE10393852B4 | Germany | B4 | |
| DE60238693D1 | Germany | D1 | |
| JP4632639B2 | Japan | B2 | |
| DE10393853B4 | Germany | B4 | |
| JP5467781B2 | Japan | B2 | |
| EP1435115B1 | European Patent Office (EPO) | B1 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 2737592
Titles2
- German
- LEISTUNGS-MOSFET MIT GRABEN-GATEELEKTRODE UND VERFAHREN ZU DESSEN HERSTELLUNG
- English
- POWER MOSFET WITH TRIANGLE GATE ELECTRODE AND METHOD FOR THE PRODUCTION THEREOF
Classification
- CPC, 7
- H01L29/7813
- H01L21/2253
- H01L29/0634
- H01L29/0847
- H01L29/0878
- H01L29/1095
- H01L29/7811
- IPC, 6
- H01L21 225
- H01L21 336
- H01L29 06
- H01L29 08
- H01L29 10
- H01L29 78