Method and apparatus for developing photoresist patterns

(57) The system and equipment for the yield and the line width characteristic for summary liquefied polymer and other materials which have been improved are explained. The method for making precipitation of a development reactant into the minimum by reducing a rapid change of pH, The above-mentioned polymer is rinsed using the above-mentioned developing solution of developing at least one copy of the polymer layer on a substrate using the developing solution of a certain quantity, and the amount of; additions, and the change of pH with after that rapid is minimized so that control is possible. ; It ranks second, It includes rinsing the above-mentioned polymer using another liquid of a certain quantity. The equipment for improving yield and a line width control characteristic by making into the minimum liquid collision power over the polymer layer on a substrate which should be developed, The nozzle containing two or more rinse agent lead pipes combined with the rinse manifold and the; above-mentioned development manifold which suited so that two or more developing solution lead pipes and; rinse agents which were combined with the development manifold and the; above-mentioned development manifold which suited so that a developing solution might be supplied might be supplied, and; is provided. The above-mentioned liquid manifold and the above are also acquired, and in these, as compared with intersection or the nominal external width of the above-mentioned nozzle which can be attained without arranging alternately, one manifold is alternately arranged so that the external width of the above-mentioned nozzle may be decreased. This system and method offer the process-induced defect which decreased, the improved yield by the number of particles, and the advantage containing the improved critical size (CD) control ability.