Formation of high quality back contact with screen-printed local back surface field

Where the thin silicon solar cell, comprising a baffle dielectric passivation layer and a local back field back contact. , The solar battery capable of the thickness is 50~500 microns crystallization silicon is made special. At least is nitride baffle layer and dielectric layer of silicon wafer back surface, is formed on the back of silicon wafer for. The dielectric layer formed at least one thereof. The formed on the opening surface dielectric layer providing back field aluminium touch. A % the silicon aluminium sizing agent and is 750℃ and heat - treatment to receive applying the aluminium touch to a through a silk screen printing with 1~12 atoms.