Last-first mode and method for programming of non-volatile memory of nand type with reduced program disturb

NAND-type non-volatile memory system is programmed to reduce the incidence of program confusion for the protected memory elements is boosted to reduce the confusion program bar, according to the boosted word line position gain is reduced. To obtain this result, the upper word lines are first, and the remaining word lines are out of order relative to the order of the adjustment word line to program the memory element to be programmed. In addition, the self-boosting can be used for the upper word line, it can be used while erased area self-boosting and for other things remaining word lines. Furthermore, to the non-volatile storage elements that are associated with those programs after the first word line, the phase of the channel charge nematodes forbidden memory element may be employed prior to the self-boosting.NAND, flash, boosting, program confusion, the word line, the sequence