Nitride semiconductor component and method for the production thereof

The present invention relates to a method for fabricating a layered structure of a nitride semiconductor component on a silicon surface, said method comprising the steps of: preparing a substrate having a silicon surface; Depositing an aluminum-containing nitride nucleation layer on the silicon surface of the substrate; Selectively depositing an aluminum-containing nitride buffer layer on the nitride nucleation layer; Depositing a masking layer on the nitride nucleation layer or, if present, a first nitride buffer layer; And depositing a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is formed such that individual crystals first mutually grow on the coalescence layer thickness in the deposition step of the first nitride semiconductor layer, Lt; RTI ID = 0.0 & gt; μm & lt; / RTI & gt; in the layer plane of the mutually grown nitride semiconductor layer2Lt; RTI ID = 0.0 & gt; a & lt; / RTI & gt; A nitride semiconductor component, a silicon surface, a substrate, a nitride nucleation layer, a nitride buffer layer.