Method of fabricating an ultra-narrow channel semiconductor device

The invention claims a forming nanowire method. The wiring deposited with the first of nanowire and first medium layer on a substrate. Deposited with sacrifice medium layer and sacrifice grid electrode layer sacrifice gate and first nanowire area without interrupting, exposed a nanowire the second area and high domain. On each side of the sacrificing the gate plate are stacked on the top of the deposited the first end piece. Deposited the second medium layer above the first medium layer, cover the second area and high domain. The film is sacrificed the gate stacked staggered fins on the top of the. At least thermal oxidization process and oxide film removing technique attenuation nanowire's first area, the first area of the first as to attenuate to the second size.