Submicron metallization using electrochemical deposition

(57) The method of making minute 凹所 structure depositing metal on the surface of a summary microelectronic circuit workpiece is clarified. This method is suitable for the use have no additive agent and relevant to the electroplating liquid of additive agent content. According to one case of the operation, this method includes contacting between the surface of a microelectronic circuit workpiece, and electroplating liquid in the negative pole and electroplating liquid which were formed of the surface of the microelectronic circuit workpiece, and the electroplating container equipped with the anode arranged at an electric interengagement state. Next, the thin film of the metaled beginning accumulates in minute 凹所 structure, using at least the 1st electroplating waveform that has the 1st current density. For strengthening of deposition of the metal in the bottom of minute 凹所 structure, the 1st current density 1st of an electroplating waveform is offered. Metaled deposition is continued after plating of this beginning, using at least the 2nd electroplating waveform that has the 2nd current density. The 2nd current density 2nd of an electroplating waveform is offered. In order to support shortening of the time required in order to make filling of minute 凹所 structure complete substantially, the 2nd current density 2nd of an electroplating waveform is offered.