Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell

The apparent charge stored on a floating gate of the nonvolatile memory cell (or other charge storing element), can be changed due to the coupling of the electric field based on the charge stored in adjacent floating gates (or other charge storage device). In order to solve this coupling problem, invar the read process for a targeted memory cell will provide compensation to an adjacent memory cell (or other memory cell), which reduce the coupling effect of the adjacent memory cell is in the target memory cell, intended to. It is that compensation is based on the state of an adjacent memory cell. In order to apply the correct compensation, the read process is at least partially alternating the reading operation for the target memory cell in the read operation for the adjacent memory cells.Coupling effect, the target memory cell, the adjacent memory cells, the flash memory