Floating gate memory with compensating for coupling during programming

Non-can be shifted due to the coupling of the electric field based on the charge stored in the floating gate (or other charge storing element), the floating gates of the apparent charge adjacent stored on (or other adjacent charge storing elements) of the volatile memory cell. To compensate for this coupling, the read or programming method for a given memory cell may take into account the programmed state of an adjacent memory cell. In order to determine if a reward (such as adjacent bit line or other location), an adjacent memory cell comprises the step of detecting the information about the state of the program can be performed.