Method for controlled programming of non-volatile memory exhibiting bit line coupling

Bit in the non-volatile memory called a human coupling effect is solved. In order to inhibit programming during a portion of the program voltage, the inhibit voltage is provided on the store's bit line to be programmed. The inhibit voltage is removed subsequently during the program voltage, allowing the programming. Good access of the bit line due to the change in the bit line voltage is bar coupled to the adjacent non-selected bit line and the select gate to open enough to discharge the boost voltage, which reduces the neighboring bit line voltage. In order to prevent this, the bit line voltage select gate voltage during the change in (Vsgd) is temporarily controlled bars, which prevent the biasing becomes sufficient to open the select gate of the select gate on the non-selected bit line in order be.