AT467231T
Method of forming vias in silicon carbide and resulting devices and circuits
Abstract
This record has no abstract on file.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
45 members in 11 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 54682100 | United States of America | A | |
| 0110289 | United States of America | W |
Members45
| Document | Office | Kind | |
|---|---|---|---|
| CA2406054A1 | Canada | A1 | |
| WO0178120A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU4965901A | Australia | A | |
| US2002055265A1 | United States of America | A1 | |
| US2002066960A1 | United States of America | A1 | |
| US6475889B1 | United States of America | B1 | |
| KR20020093901A | Republic of Korea | A | |
| EP1273032A1 | European Patent Office (EPO) | A1 | |
| US6515303B2 | United States of America | B2 | |
| CN1429400A | China | A | |
| JP2003530716A | Japan | A | |
| US6649497B2 | United States of America | B2 | |
| TW571383B | Taiwan Province of China | B | |
| US2004241970A1 | United States of America | A1 | |
| CN1197126C | China | C | |
| US6946739B2 | United States of America | B2 | |
| US2006065910A1 | United States of America | A1 | |
| WO2006091788A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW200636985A | Taiwan Province of China | A | |
| US7125786B2 | United States of America | B2 | |
| EP1851787A1 | European Patent Office (EPO) | A1 | |
| KR100797130B1 | Republic of Korea | B1 | |
| JP2008532290A | Japan | A | |
| TWI309086B | Taiwan Province of China | B | |
| US2009104738A1 | United States of America | A1 | |
| EP1273032B1 | European Patent Office (EPO) | B1 | |
| EP2182548A2 | European Patent Office (EPO) | A2 | |
| AT467231TThis record | Austria | T | |
| ATE467231T1 | Austria | T1 | |
| DE60142035D1 | Germany | D1 | |
| EP2182548A3 | European Patent Office (EPO) | A3 | |
| CA2406054C | Canada | C | |
| US7892974B2 | United States of America | B2 | |
| US2011108855A1 | United States of America | A1 | |
| US2011165771A1 | United States of America | A1 | |
| EP2416349A2 | European Patent Office (EPO) | A2 | |
| US8202796B2 | United States of America | B2 | |
| EP2182548B1 | European Patent Office (EPO) | B1 | |
| JP5142438B2 | Japan | B2 | |
| EP2416349A3 | European Patent Office (EPO) | A3 | |
| US9490169B2 | United States of America | B2 | |
| US2017012106A1 | United States of America | A1 | |
| EP1851787B1 | European Patent Office (EPO) | B1 | |
| US10367074B2 | United States of America | B2 | |
| EP2416349B1 | European Patent Office (EPO) | B1 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 1922909
Titles2
- German
- VERFAHREN ZUR HERSTELLUNG VON VIAS IN SILIZIUM CARBID UND DESSEN BAUELEMENTEN UND SCHALTKREISE
- English
- PROCESS FOR THE PREPARATION OF VIAS IN SILICON CARBIDE AND ITS COMPONENTS AND CIRCUITS
Classification
- CPC, 4
- H01L21/76898
- H01L21/0445
- H01L2924/0002
- H01L29/1608
- IPC, 6
- H01L21 04
- H01L21 28
- H01L21 3205
- H01L21 768
- H01L23 52
- H01L23 522