Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

An epitaxial silicon carbide layer is produced by forming the 1st form in the surface of the silicon carbide board oriented with the off-axis toward the crystallographic direction. The 1st form is equipped with at least one side wall oriented with being un-parallel (namely, slant or a right angle) to the crystallographic direction. Subsequently, the 1st epitaxial silicon carbide layer is grown up on the surface of a silicon carbide board equipped with the 1st form. Subsequently, the 2nd form is formed in. And the 1st epitaxial layer. The 2nd form is equipped with at least one side wall oriented with being un-parallel to the crystallographic direction. Subsequently, the 2nd epitaxial silicon carbide layer grows on the surface of the 1st epitaxial silicon carbide layer equipped with the 2nd form.