PREPARATION OF A RELAXED SiGe LAYER ON AN INSULATOR

This invention public has a for in insulated body (74) of ease SiGe (SGOI) Shang formed strain Si or strain SiGe of method, in semiconductor lining end of Shang growth sustained variable Si1-xGex layer (20) and extension Si1-yGey layer, in by in Si1-yGey layer (30) in the injected hydrogen (70), to formed rich hydrogen defects layer, through chemical machinery polished smooth surface, through heat treatment will two a lining end of bond in together, and in rich hydrogen defects layer separation two a bond of lining end of. Can be separated through the CMP on the substrate surface (75), smooth surface for epitaxial deposition on the other layers.