Nova Patents
AT459964T

Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric

Abstract

This record has no abstract on file.

Term

Term ended

Expired 17 September 2022, 4 years ago.

  1. Priority
  2. Filed
  3. Granted
  4. Expired
  5. Today

25 members in 8 offices

This recordMember, by publication datePriority claim

Priority claims3

Priority claims
DocumentOfficeKindDate
95564101United States of AmericaA
2432701United States of AmericaA
0229507United States of AmericaW

Members25

Family members, oldest first
DocumentOfficeKind
WO03025944A1World Intellectual Property Organization (WIPO)A1
US2003063518A1United States of AmericaA1
US2003198085A1United States of AmericaA1
US6667902B2United States of AmericaB2
US6671040B2United States of AmericaB2
US2004008538A1United States of AmericaA1
TW577081BTaiwan Province of ChinaB
US2004047218A1United States of AmericaA1
EP1436815A1European Patent Office (EPO)A1
US6798693B2United States of AmericaB2
US2004208055A1United States of AmericaA1
US2004223370A1United States of AmericaA1
US6822888B2United States of AmericaB2
JP2005504434AJapanA
CN1667753AChinaA
US7031209B2United States of AmericaB2
US7042772B2United States of AmericaB2
EP1436815A4European Patent Office (EPO)A4
CN100585738CChinaC
EP1436815B1European Patent Office (EPO)B1
AT459964TThis recordAustriaT
ATE459964T1AustriaT1
DE60235562D1GermanyD1
JP2010103563AJapanA
JP4599059B2JapanB2