Memory stacking system and method

The method of forming a stacked memory module from a plurality of memory devices is provided. Each of the plurality of memory devices is modified to include a logic block for decoding a plurality of select signals. The modified high-density memory devices and a first memory module including a serial presence detect device are also provided. A first high-density memory module is contained within the electronic system. In addition, there is provided a further method of forming a stacked memory module, and, this method requires modification of the address buffer to include a logic block for decoding a plurality of chip select signals. The modified address buffer and a second high-density memory module serial presence detect device comprises a are also provided. A second high-density memory module is contained within the electronic system.A memory module, a high-density memory modules, the memory stacking system, the semiconductor memory