Nova Patents
AT459105T

VERTICAL GEOMETRY InGaN LED

Abstract

The claimed is a energy transmission the electromagnetic spectrum the total red, green, blue light, wherein the inner and ultraviolet hardening part structure of light-emitting diode. The light-emitting diode on the substrate, and is not doped the gallium nitride layer and ohmic contact with each multiple-quantum of each of the conductive silicon carbide substrate and gallium nitride integer, and conductive buffering layer and quantum the vertical direction structure.

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Granted
  4. Today

27 members in 11 offices

This recordMember, by publication datePriority claim1 more office is in the list below

Priority claims8

Priority claims
DocumentOfficeKindDate
15436398United States of AmericaA
15436398United States of AmericaA
9921362United States of AmericaW
9921362United States of AmericaW
154363–––
9921362–––
US19980154363–––
WO1999US21362–––

Members27

Family members, oldest first
DocumentOfficeKind
CA2344391A1CanadaA1
WO0021144A2World Intellectual Property Organization (WIPO)A2
AU2342600AAustraliaA
WO0021144A3World Intellectual Property Organization (WIPO)A3
WO0021144A9World Intellectual Property Organization (WIPO)A9
EP1116282A2European Patent Office (EPO)A2
KR20010075185ARepublic of KoreaA
TW475275BTaiwan Province of ChinaB
JP2002527890AJapanA
US2002121642A1United States of AmericaA1
US6459100B1United States of AmericaB1
CN1413362AChinaA
US6610551B1United States of AmericaB1
US2004232433A1United States of AmericaA1
CN1206744CChinaC
US7034328B2United States of AmericaB2
KR100639170B1Republic of KoreaB1
JP2008004970AJapanA
JP4405085B2JapanB2
EP1116282B1European Patent Office (EPO)B1
AT459105TThis recordAustriaT
ATE459105T1AustriaT1
DE69942065D1GermanyD1
USRE42007EUnited States of AmericaE
JP4625979B2JapanB2
CA2344391CCanadaC
USRE45517EUnited States of AmericaE