Rotational shear stress for charge carrier mobility modification

The semiconductor structure and a manufacturing method of using a semiconductor substrate is disclosed having an active region (11) mesa surrounded by an isolation trench. A first having a first stress isolation regions 12 are located in the isolation trench. The second isolation region (16a, 16b) having a first stress and the second stress different types are also located in the isolation trench. The first isolation region and the second isolation region are sized and positioned that is adjusted to the rotational shear stress for the active region mesa.The active region mesa, rotational shear stress, the isolation trench