AT453853T

Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (sers) substrate

Abstract

Method and device publicizes pertain is a metal coating the nano crystal porous silicon-based target aluminium Raman spectrograph method. The porous silicon matrix is arranged on the front ion corrosion is formed on the thin hydrofluoric device. By using the negative electrode for or any known technology, After active metal's thin layer is one corrosion to the mapping silicon, which is an active metal such as a metal or silver. The fields, the coated with metal porous silicon matrix comprises a mapping silicon matrix for plasma an deoxidation potential meter probe/ph valve, wherein dips and decomposition. The coated with metal matrix is SERS, SERBS, wherein After and/or CARS Raman spectrograph method of claims delaying, wherein the metal rich environment. The fields, metal with particles is added the is provided with a metal matrix, a line is Raman signal. The bus method and device, Raman spectrograph method can be used on the detections, appraisals and/or quantitative a analytes. Of claims a method, Raman spectrograph method can be used in layer of single molecule, detecting nucleotide, purine or metadiazine.

Term

No projected expiry on record.

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46 members in 12 offices

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36897603United States of AmericaA
0331784United States of AmericaW

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WO2004074790A1World Intellectual Property Organization (WIPO)A1
AU2003282750A1AustraliaA1
KR20050013571ARepublic of KoreaA
EP1511980A1European Patent Office (EPO)A1
HK1071427A1Hong Kong, ChinaA1
JP2005524857AJapanA
CN1659425AChinaA
EP1595120A1European Patent Office (EPO)A1
US6970239B2United States of AmericaB2
US6989897B2United States of AmericaB2
CN1745291AChinaA
JP2006514286AJapanA
US2006215154A1United States of AmericaA1
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EP1511980B1European Patent Office (EPO)B1
AT372505TAustriaT
DE60316150D1GermanyD1
MY134271AMalaysiaA
TWI290621BTaiwan Province of ChinaB
US7361313B2United States of AmericaB2
DE60316150T2GermanyT2
US7400395B2United States of AmericaB2
CN100498247CChinaC
JP4347801B2JapanB2
US7608305B2United States of AmericaB2
EP1595120B1European Patent Office (EPO)B1
AT453853TThis recordAustriaT
DE60330809D1GermanyD1
US2010171950A1United States of AmericaA1
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