Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (sers) substrate
Abstract
Method and device publicizes pertain is a metal coating the nano crystal porous silicon-based target aluminium Raman spectrograph method. The porous silicon matrix is arranged on the front ion corrosion is formed on the thin hydrofluoric device. By using the negative electrode for or any known technology, After active metal's thin layer is one corrosion to the mapping silicon, which is an active metal such as a metal or silver. The fields, the coated with metal porous silicon matrix comprises a mapping silicon matrix for plasma an deoxidation potential meter probe/ph valve, wherein dips and decomposition. The coated with metal matrix is SERS, SERBS, wherein After and/or CARS Raman spectrograph method of claims delaying, wherein the metal rich environment. The fields, metal with particles is added the is provided with a metal matrix, a line is Raman signal. The bus method and device, Raman spectrograph method can be used on the detections, appraisals and/or quantitative a analytes. Of claims a method, Raman spectrograph method can be used in layer of single molecule, detecting nucleotide, purine or metadiazine.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
46 members in 12 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 36897603 | United States of America | A | |
| 0331784 | United States of America | W |
Members46
| Document | Office | Kind | |
|---|---|---|---|
| US2003231304A1 | United States of America | A1 | |
| WO03106943A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2003232139A1 | Australia | A1 | |
| TW200407536A | Taiwan Province of China | A | |
| US2004135997A1 | United States of America | A1 | |
| US2004161369A1 | United States of America | A1 | |
| WO2004074790A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2003282750A1 | Australia | A1 | |
| KR20050013571A | Republic of Korea | A | |
| EP1511980A1 | European Patent Office (EPO) | A1 | |
| HK1071427A1 | Hong Kong, China | A1 | |
| JP2005524857A | Japan | A | |
| CN1659425A | China | A | |
| EP1595120A1 | European Patent Office (EPO) | A1 | |
| US6970239B2 | United States of America | B2 | |
| US6989897B2 | United States of America | B2 | |
| CN1745291A | China | A | |
| JP2006514286A | Japan | A | |
| US2006215154A1 | United States of America | A1 | |
| US2007116605A1 | United States of America | A1 | |
| US2007116882A1 | United States of America | A1 | |
| EP1511980B1 | European Patent Office (EPO) | B1 | |
| AT372505T | Austria | T | |
| DE60316150D1 | Germany | D1 | |
| MY134271A | Malaysia | A | |
| TWI290621B | Taiwan Province of China | B | |
| US7361313B2 | United States of America | B2 | |
| DE60316150T2 | Germany | T2 | |
| US7400395B2 | United States of America | B2 | |
| CN100498247C | China | C | |
| JP4347801B2 | Japan | B2 | |
| US7608305B2 | United States of America | B2 | |
| EP1595120B1 | European Patent Office (EPO) | B1 | |
| AT453853TThis record | Austria | T | |
| DE60330809D1 | Germany | D1 | |
| US2010171950A1 | United States of America | A1 | |
| US7771661B2 | United States of America | B2 | |
| KR100990580B1 | Republic of Korea | B1 | |
| CN1659425B | China | B | |
| JP2011221032A | Japan | A | |
| JP5085006B2 | Japan | B2 | |
| US8367017B2 | United States of America | B2 | |
| US2013243656A1 | United States of America | A1 | |
| US8709355B2 | United States of America | B2 | |
| JP2014178327A | Japan | A | |
| JP6029614B2 | Japan | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 3774634
Titles2
- German
- METALLBESCHICHTETES NANOKRISTALLINES SILIZIUM ALS AKTIVES SUBSTRAT FÜR OBERFLÄCHENVERSTÄRKTE RAMANSPEKTROSKOPIE (SERS)
- English
- METAL-COATED NANOCRYSTALLINE SILICON AS AN ACTIVE SUBSTRATE FOR SURFACE-TREATED RAM SIZE SCROSCOPY (SERS)
Classification
- CPC, 13
- G01N21/658
- B01D67/0062
- B01D67/0086
- B01D67/0088
- B01D71/02
- B82Y15/00
- B82Y30/00
- C12Q1/6825
- G01J3/44
- G01N21/65
- G01N2021/6439
- G01N2021/655
- G01N2021/656
- IPC, 5
- B01D67 00
- B01D71 02
- C12Q1 68
- G01J3 44
- G01N21 65