AT443373T
Mosfet well biasing scheme that mitigates body effect
Abstract
This record has no abstract on file.
Term
Term ended
Expired 10 January 2022, 4.7 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
12 members in 4 offices
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 26122501 | United States of America | P | |
| 94169401 | United States of America | A |
Members12
| Document | Office | Kind | |
|---|---|---|---|
| US2002093382A1 | United States of America | A1 | |
| EP1227576A2 | European Patent Office (EPO) | A2 | |
| EP1227576A3 | European Patent Office (EPO) | A3 | |
| US6680650B2 | United States of America | B2 | |
| US2005001683A1 | United States of America | A1 | |
| US6956434B2 | United States of America | B2 | |
| US2005264357A1 | United States of America | A1 | |
| US7019591B2 | United States of America | B2 | |
| EP1227576B1 | European Patent Office (EPO) | B1 | |
| AT443373TThis record | Austria | T | |
| ATE443373T1 | Austria | T1 | |
| DE60233693D1 | Germany | D1 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 2250156
Titles2
- German
- POLARISIERUNGSVERFAHREN FÜR MOSFET-STRUKTUR MIT GERINGEM SUBSTRATEFFEKT
- English
- POLARIZATION PROCESS FOR MOSFET SUBSTRATE EFFECT MOSFET STRUCTURE
Classification
- CPC, 5
- H03F3/45192
- H03F1/301
- H03F2200/153
- H03F2200/331
- H03K2217/0018
- IPC, 2
- H03F1 30
- H03F3 45