Use of data latches in multi-phase programming of non-volatile memories

A non-volatile storage device comprises for controlling the nonvolatile memory multi-stage programming process circuit. Demonstrative embodiment is a through a reading technology, using a single programming), the change selected storage location of composed of a storage location close to the target value and a lifting to the selected storage location illegal cooking voltage layer is fan speed programming. The invention's surface of introduces with a latch for reading/writing circuit is connected, wherein reading/writing circuit is mounted along the corresponding position line is connected with each selected storage location is used for storing is the low level test result.