AT419558T

Methods for fabrication of nanometer-scale engineered structures for mask repair application

Abstract

Using writing with a repairing and manufacturing photo mask directly, comprising: Using scanning probe microscopy insulating a size of deposition gel of the metal oil ink material. Increasing method of with the subtracting to a method. Can use the nano structure of a filling nozzle. A control of the opening hole of the nano structure height; and two said of the control measuring structure. Can use and made on the glass the chrome cover, and more improved cover, comprising mask for nanoimprinting full with a.

Term

No projected expiry on record.

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44 members in 11 offices

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Priority claims
DocumentOfficeKindDate
41978102United States of AmericaP
41978102United States of AmericaP
419781P
US20020419781P

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WO2004038504A2World Intellectual Property Organization (WIPO)A2
AU2003290531A1AustraliaA1
AU2003290531A8AustraliaA8
US2004127025A1United States of AmericaA1
US2004175631A1United States of AmericaA1
WO2004038504A3World Intellectual Property Organization (WIPO)A3
CA2537023A1CanadaA1
WO2005037418A2World Intellectual Property Organization (WIPO)A2
KR20050071599ARepublic of KoreaA
EP1556737A2European Patent Office (EPO)A2
CA2557472A1CanadaA1
WO2005084092A2World Intellectual Property Organization (WIPO)A2
US2005235869A1United States of AmericaA1
US2005255237A1United States of AmericaA1
WO2005084092A3World Intellectual Property Organization (WIPO)A3
CN1726431AChinaA
TW200604692ATaiwan Province of ChinaA
JP2006504136AJapanA
US7005378B2United States of AmericaB2
WO2005037418A3World Intellectual Property Organization (WIPO)A3
EP1665360A2European Patent Office (EPO)A2
EP1726193A2European Patent Office (EPO)A2
CN1875469AChinaA
JP2007503725AJapanA
KR20070026297ARepublic of KoreaA
KR20070029151ARepublic of KoreaA
CN101002513AChinaA
JP2007528796AJapanA
EP1556737B1European Patent Office (EPO)B1
AT419558TThis recordAustriaT
ATE419558T1AustriaT1
DE60325629D1GermanyD1
US7491422B2United States of AmericaB2
CN100583401CChinaC
US7691541B2United States of AmericaB2
EP1665360A4European Patent Office (EPO)A4
JP4740850B2JapanB2
KR101084395B1Republic of KoreaB1
US8071168B2United States of AmericaB2
KR101101698B1Republic of KoreaB1
CA2537023CCanadaC
US2012100304A1United States of AmericaA1
KR101165484B1Republic of KoreaB1
CA2557472CCanadaC