Substrate electron injection techniques for programming non-volatile charge storage memory cells

The invention claims a programming technology for quick flash storage, wherein the programming technology to make the electronic to pour of the substrate storage location charging storage battery. A along the common word and wire or this control gate line by exerting to the diameter of the voltage programming storage location source area and connected with the electric suspended with, and programmed storage location source reflecting drain electrode region provided with a voltage of exerting. The programming technology applied to a NOR or an NAND structure and storage location array.