AT414911T

Providing current control over wafer borne semiconductor devices using overlayer patterns

Abstract

Liquid matter is bus is a substrate (1240) and at least one with source block (1240) and at least one surface layer (1240) semiconductor chip (1240) for providing chip parasite current control method. The electric control device (1240) realize by a method for rotating the connecting element (1215) is formed, wherein the pattern (1240) comprises to form is provided with infusion and/or the sacrifice of layer is an active device the connecting element (1215) represents. The current is wound with the contact element (1215) and active device related active area (1260). The is claimed is used for wafer-level of semiconductor device integrated older of the WLBI) method and system. The is a WLBI method and system, wafer-level current control system is important.

Term

No projected expiry on record.

  1. Priority
  2. Filed
  3. Granted
  4. Today

59 members in 10 offices

This recordMember, by publication datePriority claim

Priority claims1

Priority claims
DocumentOfficeKindDate
31191601United States of AmericaP

Members59

Family members, oldest first
DocumentOfficeKind
CA2457675A1CanadaA1
CA2457680A1CanadaA1
CA2457685A1CanadaA1
CA2457690A1CanadaA1
CA2457691A1CanadaA1
WO03017325A2World Intellectual Property Organization (WIPO)A2
WO03017326A2World Intellectual Property Organization (WIPO)A2
WO03017335A2World Intellectual Property Organization (WIPO)A2
WO03017352A2World Intellectual Property Organization (WIPO)A2
WO03017353A2World Intellectual Property Organization (WIPO)A2
AU2002323125A1AustraliaA1
AU2002323126A1AustraliaA1
AU2002331069A1AustraliaA1
AU2002331074A1AustraliaA1
AU2002356039A1AustraliaA1
WO03017326A3World Intellectual Property Organization (WIPO)A3
WO03017352A3World Intellectual Property Organization (WIPO)A3
WO03017353A3World Intellectual Property Organization (WIPO)A3
WO03017335A3World Intellectual Property Organization (WIPO)A3
WO03017325A3World Intellectual Property Organization (WIPO)A3
KR20040030103ARepublic of KoreaA
KR20040030104ARepublic of KoreaA
KR20040030105ARepublic of KoreaA
KR20040030106ARepublic of KoreaA
KR20040030107ARepublic of KoreaA
EP1417499A2European Patent Office (EPO)A2
EP1417500A2European Patent Office (EPO)A2
EP1417501A2European Patent Office (EPO)A2
EP1421396A2European Patent Office (EPO)A2
EP1423872A2European Patent Office (EPO)A2
JP2005500686AJapanA
JP2005500688AJapanA
JP2005500690AJapanA
JP2005500691AJapanA
CN1568429AChinaA
CN1568431AChinaA
CN1568432AChinaA
CN1568433AChinaA
CN1568539AChinaA
US2005024076A1United States of AmericaA1
JP2005510044AJapanA
US2006097337A1United States of AmericaA1
US2007029549A1United States of AmericaA1
US7190184B2United States of AmericaB2
US2007117242A1United States of AmericaA1
KR100780059B1Republic of KoreaB1
EP1417500B1European Patent Office (EPO)B1
AT414911TThis recordAustriaT
ATE414911T1AustriaT1
DE60229954D1GermanyD1
CN100533165CChinaC
US7662650B2United States of AmericaB2
US7700379B2United States of AmericaB2
US2010264511A1United States of AmericaA1
US8039277B2United States of AmericaB2
US8129253B2United States of AmericaB2
JP5009487B2JapanB2
JP5009488B2JapanB2
EP1417501B1European Patent Office (EPO)B1