Multi-height finfets

The invention claims a FinFET device, wherein of the first fin sheet and second fin. Each fin with channel region and a source and drain electrode area of the channel area extends. The fin with different same. The invention arranged between the fin the gate conductor. The gate conductor is vertical to the fin extend and close crossed the first fin sheet and second fin sheet and area. The fins are parallel. First fin sheet and second fins are ratio a ratio 1: two - thirds. The ratio is used to adjust the opening groove width of property and an transistor with transistor.