Antiwaveguiding tilted cavity vcsel or led

The semiconductor photoelectron device (650) contains at least one cave (660) and at least one multilayer interference antenna reflector (620, 630). The cave (660) is designed to have preferably the characteristic of the anti-導波路 cave which optical mode does not spread in a lateral field. The optical mode which exists is the mode spread in the direction (633) sloping in the angle which receives perpendicularly or perpendicularly and is less than the angle of all the internal reflection in the interface of a semiconductor and air. Make such a design reduce and the influence of parasitism optical mode And a perpendicular cavernous surface emission-type laser, The characteristic of the inclination cave type laser, the perpendicular cavernous resonance or the inclination cavernous resonance optical power detector, the perpendicular cavernous resonance or the inclination cavernous resonance light amplifier emitted through the top surface or a substrate, and the photoelectron device containing a light emitting diode is improved.