Semiconductor optoelectronic device with electrically adjustable transfer function

The invention claims a photoelectric device, comprising at least three are selected semiconductor layer (1-3) and two air clearances folding on internet. The semiconductor device (1-3) is a N a or a p type and doped with, adjacent layer doped with the same or different, wherein between the semiconductor to the insulating layer (8,9) is separated by with a been doped (particularly a I and) or dopes (N or P), particularly by the air cavity (10-1,10-2) PINIP or the NIPIN, wherein the semiconductor layer are and selected the corresponding electric potential. The level (1-3) and insulating layer of thickness and a selection to the; a to the structure is provided at least a are be the processing light the light transmission function, wherein the function to be positioning according to flow adjusting to the semiconductor layer selected electric potential.