Method of forming thick silica-based film
Abstract
On the substrate, 0.5 ~ 5 [micro] m of the membrane method for easily and efficiently forming a silica-based coating film having a thickness, the coating and the coating liquid supplied to the coating film, and provides a method of manufacturing the same. The present invention is Si (OR)4 A silicon compound represented by (A) and / or ROnenSi (OR2)4-n (Where, n is an integer of 1-3) and the silicon compound (B) represented by, R3CH2Alcohol represented by OH (C) and the oxalic acid (D) to produce a solution of the polysiloxane having a polystyrene-reduced number average molecular weight of 2000-15000 by heating at 50 ~ 180 & lt; 0 & gt; C the reaction mixture in the presence of water in the absence containing a specific ratio and, applying a coating liquid containing the solution to a substrate surface, a method of forming the silica-based coating film comprising a step of heat-curing a coating film obtained by 80 ~ 600 & lt; 0 & gt; C by the coating, the thickness of 0.5 ~ 5 [micro] m film having, and the film coating solution and the method of manufacturing the same is supplied to the.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
15 members in 8 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 2001125339 | Japan | A |
Members15
| Document | Office | Kind | |
|---|---|---|---|
| WO02088267A1 | World Intellectual Property Organization (WIPO) | A1 | |
| JP2003031569A | Japan | A | |
| EP1391491A1 | European Patent Office (EPO) | A1 | |
| KR20040030591A | Republic of Korea | A | |
| US2004115955A1 | United States of America | A1 | |
| EP1391491A4 | European Patent Office (EPO) | A4 | |
| US2006189163A1 | United States of America | A1 | |
| US7211522B2 | United States of America | B2 | |
| KR100742557B1 | Republic of Korea | B1 | |
| JP4055459B2 | Japan | B2 | |
| EP1391491B1 | European Patent Office (EPO) | B1 | |
| AT391759TThis record | Austria | T | |
| DE60226022D1 | Germany | D1 | |
| TWI299746B | Taiwan Province of China | B | |
| US7491651B2 | United States of America | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 2724627
Titles2
- German
- VERFAHREN ZUR HERSTELLUNG EINES DICKEN FILMS AUF BASIS VON SILICIUMDIOXID
- English
- METHOD FOR PRODUCING A THICK FILM BASED ON SILICON DIOXIDE
Classification
- CPC, 5
- C09D183/02
- C08G77/08
- C09D183/04
- Y10T428/31663
- Y10T428/31667
- IPC, 7
- B05D3 02
- B05D7 24
- C08G77 08
- C09D183 02
- C09D183 04
- C09D5 25
- H01L21 312