Operating techniques for reducing the program and read disturbs of a non-volatile memory

The invention claims a non-volatile memory, provided with a cleaning device or the block, each block is divided into multiple part, terminals sharing common word line, composed of provincial set a area, and they are one pair of the reading or a programming. The demonstrating implements the is a flash and EEPROM storing quickly, comprising a NAND system; the system and the left part and part of block, and a part (512 bytes one or multiple standard pages (data transmission unit) of the data. The demonstration implements the example, the block left and right part with an independent power line, independent source and drain electrode and line. And the left programming or the reader, and demonstrating, in the biasing, generating groove to the pressure, a fan data interference. Is distance of the spare embodiment, and capable of the independent a partially structure.