AT367651T
Source-down power transistor
Abstract
(57) Summary book invention relates to the sauce down power transistor in which a narrow trench is prepared between a sauce pillar (9) and a drain pillar (10). The above-mentioned trench is filled by insulating polysilicon. When positive drain voltage and positive gate voltage are impressed, a reversal channel is formed on the surface of a wall prolonged in the transverse direction of a trench. Current controllable by gate voltage flows through the inside of the above-mentioned reversal channel.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
10 members in 6 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 19923522 | Germany | A |
Members10
| Document | Office | Kind | |
|---|---|---|---|
| DE19923522A1 | Germany | A1 | |
| WO0072359A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO0072359A3 | World Intellectual Property Organization (WIPO) | A3 | |
| EP1186052A2 | European Patent Office (EPO) | A2 | |
| JP2003500853A | Japan | A | |
| US2003042540A1 | United States of America | A1 | |
| US6686626B2 | United States of America | B2 | |
| EP1186052B1 | European Patent Office (EPO) | B1 | |
| AT367651TThis record | Austria | T | |
| DE50014497D1 | Germany | D1 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased due to non-payment of the annual feeCeasedREN | REN |
Numbers
- Application
- 940178
Titles2
- German
- SOURCE-DOWN-LEISTUNGSTRANSISTOR
- English
- SOURCE DOWN POWER TRANSISTOR
Classification
- CPC, 4
- H01L29/0847
- H01L29/4175
- H01L29/4236
- H01L29/7834
- IPC, 5
- H01L21 336
- H01L29 08
- H01L29 417
- H01L29 423
- H01L29 78