Gallium nitride materials and methods for forming layers thereof

The present invention offers the method for forming the semiconducting material containing the gallium nitride material layer currently formed on the silicon substrate, and its semiconducting material. This semiconducting material contains the transition layer formed between the silicon substrate and the gallium nitride material layer. A composition slope is attached in order for this transition layer to reduce the stress in the gallium nitride material layer which may be produced from the difference of the coefficient of thermal expansion between gallium nitride material and a substrate. If the stress in a gallium nitride material layer is reduced, the tendency which a crack generates will decrease. Therefore, the present invention enables manufacture of the semiconducting material containing the gallium nitride material layer which does not almost have a crack or is not. This semiconducting material may be used for many microelectronics uses and optical uses. [Selection figure] Fig. 1