AT359602T

Heterostructure with rear-face donor doping

Abstract

(57) The channel by which summary book invention was prepared on the buffer layer or the substrate, and a buffer or a substrate, Have the cap layer prepared on the channel and a channel consists of a piezo-electric polarization substance, The domain near the border plane between a buffer or a substrate, and a channel or the domain near the border plane between a channel and a cap layer is related with the hetero structure doped so that the piezo-electric electric charge generated at each border plane may be compensated.

Term

No projected expiry on record.

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14 members in 7 offices

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Priority claims
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10027052GermanyA

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WO0192428A1World Intellectual Property Organization (WIPO)A1
AU8572901AAustraliaA
WO0192428A8World Intellectual Property Organization (WIPO)A8
WO0192428A3World Intellectual Property Organization (WIPO)A3
EP1292648A2European Patent Office (EPO)A2
US2003155578A1United States of AmericaA1
JP2003535481AJapanA
US2006113564A1United States of AmericaA1
EP1292648B1European Patent Office (EPO)B1
AT359602TThis recordAustriaT
DE50112334D1GermanyD1
US7352008B2United States of AmericaB2
US7394112B2United States of AmericaB2
JP5179694B2JapanB2