AT359602T
Heterostructure with rear-face donor doping
Abstract
(57) The channel by which summary book invention was prepared on the buffer layer or the substrate, and a buffer or a substrate, Have the cap layer prepared on the channel and a channel consists of a piezo-electric polarization substance, The domain near the border plane between a buffer or a substrate, and a channel or the domain near the border plane between a channel and a cap layer is related with the hetero structure doped so that the piezo-electric electric charge generated at each border plane may be compensated.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
14 members in 7 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 10027052 | Germany | A |
Members14
| Document | Office | Kind | |
|---|---|---|---|
| WO0192428A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU8572901A | Australia | A | |
| WO0192428A8 | World Intellectual Property Organization (WIPO) | A8 | |
| WO0192428A3 | World Intellectual Property Organization (WIPO) | A3 | |
| EP1292648A2 | European Patent Office (EPO) | A2 | |
| US2003155578A1 | United States of America | A1 | |
| JP2003535481A | Japan | A | |
| US2006113564A1 | United States of America | A1 | |
| EP1292648B1 | European Patent Office (EPO) | B1 | |
| AT359602TThis record | Austria | T | |
| DE50112334D1 | Germany | D1 | |
| US7352008B2 | United States of America | B2 | |
| US7394112B2 | United States of America | B2 | |
| JP5179694B2 | Japan | B2 |
Numbers
- Application
- 1964955
Titles2
- German
- HETEROSTRUKTUR MIT RÜCKSEITIGER DONATORDOTIERUNG
- English
- HETEROSTRUCTURE WITH BACK DONATE ORDERING
Classification
- CPC, 5
- H01L29/7783
- H01L27/0605
- H01L27/092
- H01L29/2003
- H01L29/36
- IPC, 6
- H01L21 338
- H01L27 095
- H01L29 20
- H01L29 36
- H01L29 778
- H01L29 812