Magnetic device with magnetic tunnel junction, memory array and read/write methods using same

The writing and the read-out method using magnetic-tunnel-junction magnetism equipment, a memory, and the above-mentioned equipment. The above-mentioned equipment (16) is equipped with the standard layer (20c) and storage layer (20a) which were separated by the layer (20b) of the semiconductor or the insulator. The blocking temperature of magnetization of a storage layer is smaller than the blocking temperature of magnetization of a standard layer. Equipment is further equipped with a means (22, 24) to heat a storage layer above the blocking temperature of magnetization, and a means (26) to impress the magnetic field (34) which adjusts direction of magnetization of a storage layer to magnetization of a standard layer without changing direction of the above-mentioned standard layer to a storage layer.