Integral thin-film metal resistor with improved tolerance and simplified processing

(57) It is the method of manufacturing the micro electronic assemblies for obtaining the resistance 12 which has processing and the size characteristic of a summary request, especially the metal resistance film 14. This method is equipped with the stage which generally applies a photosensitive dielectric to the substrate 18, and forms the dielectric layer 20. Optical drawing of the dielectric layer is carried out, and it polymerizes and leaves the 1st portion 22 of the dielectric layer on the 1st domain of a substrate with un-polymerizing portion / 24 / of a dielectric layer / remaining. Next, since the electrical resistance film 28 is applied to a dielectric layer, a dielectric layer is developed and the portion of the resistance film on the unpolymerized part and an unpolymerized part is removed simultaneously, some resistance films remain on the 2nd portion, and it forms resistance. A substitute process order is applying a resistance film, before exposing a dielectric layer to radiation, and exposing a dielectric layer through a resistance film. A resistance film equips NiP, NiCr, or according to with the electrical resistance layers 28, such as a nickel content alloy, and sacrifice back 貼 30, such as 銅層, preferably.