Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon
Abstract
The invention claims a sheet-shaped structure and method, and thereby forming laminated structure of manufacturing, wherein a groove laminated structure for silicon is made. Structure of this invention includes at least substrate (2), a covering layer (3) and at least configuration and covering layer (4) in the middle layer between substrate. The middle layer (4) includes at least a substrate, a distribution the non-inherent part or the atom on the substrate; the non-inherent part or the atom are different from a substrate the part or the atom. To the invention, the piece applying heat - treatment, so on heat - treatment the temperature range, the middle layer (4) is a plastic operation, connected with the substrate and second of existence non-inherent macromolecule or atom with soak or a micro cavity (7) irreversible formed in the middle layer.
Term
No projected expiry on record.
- Priority
- Filed
- Granted
- Today
26 members in 9 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 0311450 | France | A |
Members26
| Document | Office | Kind | |
|---|---|---|---|
| FR2860249A1 | France | A1 | |
| WO2005034218A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO2005034218A3 | World Intellectual Property Organization (WIPO) | A3 | |
| FR2860249B1 | France | B1 | |
| EP1671361A2 | European Patent Office (EPO) | A2 | |
| KR20060117925A | Republic of Korea | A | |
| CN1883031A | China | A | |
| JP2007507872A | Japan | A | |
| EP1671361B1 | European Patent Office (EPO) | B1 | |
| AT358889TThis record | Austria | T | |
| DE602004005731D1 | Germany | D1 | |
| FR2895420A1 | France | A1 | |
| WO2007074242A1 | World Intellectual Property Organization (WIPO) | A1 | |
| DE602004005731T2 | Germany | T2 | |
| US2008038564A1 | United States of America | A1 | |
| FR2895420B1 | France | B1 | |
| DE112006003461T5 | Germany | T5 | |
| KR20080107352A | Republic of Korea | A | |
| CN101351879A | China | A | |
| CN100514560C | China | C | |
| US2009301995A1 | United States of America | A1 | |
| KR101044503B1 | Republic of Korea | B1 | |
| US2011250416A1 | United States of America | A1 | |
| US8062564B2 | United States of America | B2 | |
| JP4932485B2 | Japan | B2 | |
| US8475693B2 | United States of America | B2 |
1 legal event, as the office reported them to INPADOC
Events
| Event | Code | |
|---|---|---|
| Ceased as to paragraph 5 lit. 3 law introducing patent treatiesCeasedRER | RER |
Numbers
- Application
- 4787425
Titles2
- German
- VERFAHREN ZUR HERSTELLUNG EINER PLATTENFÖRMIGEN STRUKTUR INSBESONDERE AUS SILIZIUM, VERWENDUNG DES VERFAHRENS UND DER SO HERGESTELLTEN PLATTENFÖRMIGEN STRUKTUR INSBESONDERE AUS SILIZIUM
- English
- METHOD FOR PRODUCING A PLATFORM STRUCTURE, ESPECIALLY OF SILICON, USE OF THE METHOD, AND THE PLATFORM STRUCTURE MADE IN PARTICULAR, IN PARTICULAR, OF SILICON
Classification
- CPC, 3
- H01L21/76254
- C30B29/06
- C30B33/02
- IPC, 4
- C30B33 00
- C30B33 02
- H01L21 20
- H01L21 762