Multiple data state memory cell

The programmable multi-data the storage unit comprises a second conductive material is formed, and placed on the first and second metal doped with a sulphur family material and second electrode layer of the first electrode layer and a second electrode layer of the first conductive material is formed. The first claims a medium, the conductive to grow order to first and second electrode layer electrically coupled with a same base. The storage unit further - comprising a third electrode layer of the third conductive material is formed, and placed on the second and second metal doped with a sulphur family material and third electrode layer, the second claims a medium, the conductive to grow order to second and third electrode layer electrically coupled with a same base.